Abstract
Memristor, a new electrical element, can have various configurations of multiple memristors, including serial and parallel connections like previous elements R, L and C. When input voltage/current is supplied to a circuit with multiple memristors, the composite behavior of the memristor circuit exhibits transient states before it enters a steady state. During the transient state period, the behavior is very complex and not predictable due to each memristor's different action depending upon its connection polarity and initial state. In this paper, the transient characteristics of a composite memristor are analyzed via the relationships of charge, flux and memristance of each memristor. Also, the behavior of an individual memristor is formulated mathematically and a general computation method of composite memristance for multiple-memristor circuits of diverse configurations is proposed. Various simulations have also been performed to verify the effectiveness of the proposed method for differently configured memristor circuits, in terms of polarities and initial states.
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