Transient Auger analysis of silicon nitride

Abstract

Auger electron spectroscopy, combined with noble gas ion milling, is gaining increasing importance as a tool for the investigation of solid surfaces. Quantitative interpretation of experimental data is hindered by ion and electron beam effects. These effects however can be avoided or accounted for in a rather simple way. Experimental data on preferential sputtering of silicon nitride layers are obtained by studying the transients of the Auger peak-topeak heights (pph) when varying the energy of the incident ion. A simple and reliable quantification technique is demonstrated.