Abstract
A theoretical model for describing bias-dependent transient and steady-state behaviors of dark current in amorphous selenium (a-Se) avalanche detector structures has been developed. The analytical model considers bulk thermal generation current from mid-gap sates, transient carrier depletion, and carrier injection from the electrodes incorporating avalanche multiplication. The proposed physics-based dark current model is compared with the published experimental results on three potential a-Se avalanche detector structures. The steady-state dark current is the minimum for the structures that have effective blocking layers for both holes and electrons. The transient decay time to reach a plateau decreases considerably with increasing electric field.
Published Version
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