Abstract
The electric response of Ovonic devices to a time-dependent voltage is analysed by means of a charge-transport model previously proposed by the authors. The numerical implementation of the model shows that the features of the I(V) characteristics depend not only upon the external bias but also on more complex effects due to the interplay between intrinsic microscopic relaxation times and the inevitable parasitic elements of the system. Either stable or oscillating solutions are found, according to the position of the load line. The model also allows for speculation on the potential of Ovonic materials in the design of selector devices for two-terminal non-volatile memories.
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