Abstract
We introduce getchellite as a new layered material for fabrication of two-dimensional van der Waals materials and heterostructures. Nanofilms of AsSbS3 were fabricated by mechanical exfoliation. Transient absorption spectroscopy measurements identified a direct bandgap at about 710 nm, which is close to the ideal single-junction photovoltaic bandgap. Transient absorption microscopy measurements with high spatial and temporal resolution were performed to reveal the spatiotemporal dynamics of photocarriers in AsSbS3. We obtained a photocarrier lifetime of about 200 ps, a diffusion coefficient of about 5 cm2 s-1, a diffusion length of about 320 nm, and a carrier mobility of about 200 cm2 V-1 s-1. These results establish AsSbS3 as a promising two-dimensional semiconductor for optoelectronic applications as an individual material or in heterostructures.
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