Abstract
In situ ultrahigh vacuum reflection electron microscopy has been applied to the study of the clean Si(111) stepped surface during sublimation under heating by electric current through the crystal. Reversible transformations of the surface structure from the regular monoatomic step system to step bunching were observed. These transformations were found to depend on the temperature and the electric current direction. The conditions for step bunching were discussed in terms of the electrostatic interaction between diffusion-linked monoatomic steps and adatoms.
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