Transformation of point defects in silicon dioxide during annealing

Abstract

In our previous studies, we have demonstrated that annealing of silicon dioxide in the absence of oxygen leads to the formation of silicon clusters near the surface. The mechanism of the formation of silicon clusters by this technique has not been sufficiently investigated. However, it has been found that the rate of the formation of nanoclusters and their sizes depend on the concentration of point defects in the silicon dioxide and on the concentration of impurities, for example, hydroxyl groups. As a continuation of these studies, in the present work we have investigated changes in the concentration of point defects in silicon dioxide films during high-temperature annealing. A new method has been proposed for the evaluation of changes in the concentration of point defects in silicon dioxide films before and after annealing. A model of the transformation of point defects in silicon dioxide into silicon nanoclusters due to the high-temperature annealing has been developed.