Abstract
We examine the impact of negative bias temperature (NBT) stress on the fluctuations inIDandIGfor deeply scaled pMOSFETs and find that the relative high NBT stress triggersIG-RTN andID-step. Through the analysis of the field dependence of emission constant and the carrier separation measurement, it is found that under the relative high NBT stress some traps keep charged state for very long time, as observing step-like behaviors inID, while other traps emit charged holes to the gate side through TAT process, which originate bothID-step and ID-RTN.
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