Abstract
In nitrogen enhanced glow discharge plasma immersion ion implantation, the implantation current increases sharply with the gas pressure when a threshold pressure is exceeded, indicating that the glow discharge dynamics changes with increasing diatomic gas flow rate. The voltage drop rendered by the anode glow produces noticeable N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> dissociation and electron-atom ionization in the positive column which expands to the cathode. As a result, charged particles reach the cathode more easily, and the larger plasma density and N <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> /N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> ratio in the positive column lead to the higher current. Our results clarify the implantation current characteristics and expedite adoption of this alternative plasma immersion technology.
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