Abstract

Graphene has attracted much attention in materials science and electronics because of its high conductivity, strong mechanical strength, excellent flexible properties, etc. The favored fabrication method of graphene is using methane by chemical vapor deposition. Through this method high quality and large-scale monolayer graphene has been prepared. However, this graphene is not suitable for use in preparation of logical transistor devices, owing to the insufficient band gap. On the other hand, graphene nanoribbon has a finite band gap and a N-doped graphene monolayer shows a low on/off current ratio. Therefore, it is necessary to develop fabrication techniques for making graphene that is appropriate for logic devices. This paper introduces an easy fabrication method that does not need a methane source, where a solid phase source transformation to crystallize graphene is carried out on polycrystalline Copper foil, and a N-doped graphene layer is produced. Bilayer graphene is found to be achieved at most hydrogen flow rates.

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