Abstract
GaSb-based crystals shaped like a stepped pyramid with smoothed steps are obtained. The crystals are intended for the fabrication of light-emitting diodes in which the short-wavelength emission band of a double-charged intrinsic acceptor is transformed into the long-wavelength band without loss in the amount of photons emitted. It is shown experimentally and theoretically that an increase in the ratio of the area of the light-emitting diode crystal to its volume increases the external quantum yield of photons. A yield of 5.1% for the intrinsic acceptor in GaSb is attained.
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