Abstract
Approximately 25 μm Pb(Mg1/3Nb2/3)O3–PbTiO3 (PMN-PT) thick film was synthesized based on a sol-gel/composite route. The obtained PMN-PT thick film was successfully transferred from the Silicon substrate to the conductive silver epoxy using a novel wet chemical method. The mechanism of this damage free transfer was explored and analyzed. Compared with the film on Silicon substrate, the transferred one exhibited superior dielectric, ferroelectric and piezoelectric properties. These promising results indicate that transferred PMN-PT thick film possesses the capability for piezoelectric device application, especially for ultrasound transducer fabrication. Most importantly, this chemical route opens a new path for transfer of thick film.
Highlights
Ultrasound, one of the most important tools for biomedicine, has been intensively investigated for medical imaging [1], therapy [2] and manipulation [3]
Current trends indicate that the operational frequency of the ultrasound transducer is greater than
The piezoelectric layer is the core part of the ultrasound transducer
Summary
Ultrasound, one of the most important tools for biomedicine, has been intensively investigated for medical imaging [1], therapy [2] and manipulation [3]. To meet the requirements of precise medicine, ultrasound beams need to be much narrower. This will benefit high resolution medical applications. Current trends indicate that the operational frequency of the ultrasound transducer is greater than. The piezoelectric layer is the core part of the ultrasound transducer. Its thickness needs to be inversely proportional to the working frequency. To produce a high frequency (>50 MHz) ultrasound, the thickness of the piezoelectric layer is usually less than 40 m. The development of piezoelectric thick film offers a promising solution [10]
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