Abstract
Transferred-electron oscillations were observed and investigated in planar devices of In0.53Ga0.47As. The peak-to-peak magnitude of oscillations with respect to the device current at threshold field was as high as 70%, indicating the peak-to-valley velocity ratio of 3.3:1 for this material. The domain velocity was estimated from the oscillation frequency (2 GHz) and the corresponding device length (40 µm) to be 8×106 cms¯1. The results presented in the letter show a promising prospect for TED applications of this ternary alloy.
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