Transferable self-supporting ZnO porous films for low-cost piezoresistive sensors

Abstract

Transferable self-supporting ZnO porous films were synthesized via a hydrothermal approach without the presence of any substrates. Piezoresistive sensors were fabricated by directly transferring the ZnO porous films onto FTO, which show a pressure sensitivity of 0.005/KPa and a fast sensitive time with both response time and recovery time less than 1s. The results were discussed in terms of the current–voltage characteristics of the device. It is anticipated that this low-cost and large-area-compatible technology would have potential for applications in industrial, civil and transportation fields.