Abstract
We present a detailed analysis of the compositional dependence of the average E ¯ 1 of the E 1 and E 1+ Δ 1 transition energies in Ge 1− x− y Si x Sn y alloys. We show that this dependence can be explained in terms of three bowing parameters— b SiGe, b GeSn, and b SiSn—which scale with the product Δ χΔ R of the Phillips electronegativity and size mismatches between Si, Ge, and Sn.
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