Abstract
III-nitride light-emitting diodes (LEDs) grown on Si (111) substrates have the potential of low-cost manufacturing for solid-state lighting and display, by taking advantage of the well-developed IC technologies of silicon. In this letter, LEDs grown on silicon substrates were transferred onto copper substrates, to maximize light extraction and heat dissipation. On Si substrates, 300 × 300 ?m2 multiple quantum well InGaN LEDs were first grown and processed. The top surface of the fabricated devices was then temporarily bonded to a sapphire wafer and the Si substrate was chemically etched. Ti/Al/Ti/Au layers were deposited on the backside of LEDs. An 80-?m-thick copper layer was electroplated and the temporary bonding was removed, resulting in LEDs on copper substrate. The optical output power of LEDs on copper increased by ~ 70% as compared to that of the LEDs on silicon. The improved performance was attributed to the removal of the light-absorbing Si substrate and the good thermal conductivity of copper.
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