Abstract
Transfer of a CuInS2 thin film grown on a Mo/soda-lime glass substrate was investigated using a lift-off process. The CuInS2 thin film was flatly exfoliated, with preferential peeling occurring in the CuInS2/MoS2 interface vicinity. This suggests that the interfacial MoS2 layer behaves as a sacrificial layer. The lift-off process was also applied to solar cell fabrication. A superstrate-type CuInS2 thin-film solar cell was fabricated and exhibited no significant degradation of conversion efficiency compared with a substrate-type CuInS2 thin-film solar cell. The lift-off process could therefore also be applied to fabricate the upper part of a tandem solar cell structure.
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