Abstract
Oxygen plasma treatment can introduce oxidation into monolayer MoS2 to transfer MoS2 into MoOx, causing the formation of MoS2/MoOx heterostructures. We find the MoS2/MoOx heterostructures have the similar geometry compared with GaAs/Ga1−xAlxAs semiconductor superlattice. Thus, We employ the established transfer matrix method to analyse the electron transport in the MoS2/MoOx heterostructures with double-well and step-well geometries. We also considere the coupling between transverse and longitudinal kinetic energy because the electron effective mass changes spatially in the MoS2/MoOx heterostructures. We find the resonant peaks show red shift with the increasing of transverse momentum, which is similar to the previous work studying the transverse-momentum-dependent transmission in GaAs/Ga1−xAlxAs double-barrier structure. We find electric field can enhance the magnitude of peaks and intensify the coupling between longitudinal and transverse momentums. Moreover, higher bias is applied to optimize resonant tunnelling condition to show negative differential effect can be observed in the MoS2/MoOx system.
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