Abstract
The time-domain formulation of the transfer-impedance method is developed to calculate the impedance field of two-terminal semiconductor structures. The voltage noise spectrum associated with velocity fluctuations is then calculated for overmicron and submicron n+nn+ GaAs diodes in the framework of a closed hydrodynamic approach based on the velocity and energy conservation equations. Transit-time effects are found to influence substantially the noise spectrum in a wide frequency range above 10 GHz. The good agreement found with Monte Carlo simulations validates the proposed theoretical approach.
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