Abstract
A method for the direct synthesis of wafer-scale graphene on dielectric substrates using trace amounts of carbon found in metals is reported. Graphene films were synthesized through a single-step thermal annealing process of a Cu/Ni bilayer deposited on a SiO2/Si and a quartz substrate in a low pressure H2/Ar environment. No additional carbon source was provided. The Cu film partially evaporated during growth, leaving a graphene layer above and beneath the Ni film. A wet etch step allowed complete removal of the metals, resulting in continuous graphene coverage of the surface. A simple pattered synthesis of graphene was performed using this technique demonstrating the ability to control the growth of graphene to specific regions over large areas of the wafer.
Published Version
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