Abstract
In this work, we grew transfer-free graphene-like thin films (GLTFs) directly on gallium nitride (GaN)/sapphire light-emitting diode (LED) substrates. Their electrical, optical and thermal properties were studied for transparent electrode applications. Ultrathin platinum (2 nm) was used as the catalyst in the plasma-enhanced chemical vapor deposition (PECVD). The growth parameters were adjusted such that the high temperature exposure of GaN wafers was reduced to its minimum (deposition temperature as low as 600 °C) to ensure the intactness of GaN epilayers. In a comparison study of the Pt-GLTF GaN LED devices and Pt-only LED devices, the former was found to be superior in most aspects, including surface sheet resistance, power consumption, and temperature distribution, but not in optical transmission. This confirmed that the as-developed GLTF-based transparent electrodes had good current spreading, current injection and thermal spreading functionalities. Most importantly, the technique presented herein does not involve any material transfer, rendering a scalable, controllable, reproducible and semiconductor industry-compatible solution for transparent electrodes in GaN-based optoelectronic devices.
Highlights
Gallium nitride (GaN) has attracted remarkable attention as an important material for application in optoelectronic and microelectronic devices, such as light-emitting diodes (LEDs), laser diodes (LDs), solar cells (SCs), and high electron mobility transistors (HEMTs) [1,2,3,4]
Through the measurement of electrical, optical, and thermal properties, we found that the addition of graphene-like thin films (GLTFs) improved the LED luminous current and reduced the turn-on voltage and luminous power consumption, and had obvious advantages in heat spreading, which has great prospects for improving the reliability, durability and service life of the device
Results and Discussionwhether or not the platinum was affected by the high temperature process, gallium nitride samples with a 2 nm platinum deposit were annealed for 25 min in an argon environment order whether or not the platinum was affected by highastemperature process, at 600In and to
Summary
Gallium nitride (GaN) has attracted remarkable attention as an important material for application in optoelectronic and microelectronic devices, such as light-emitting diodes (LEDs), laser diodes (LDs), solar cells (SCs), and high electron mobility transistors (HEMTs) [1,2,3,4]. In this study, we used ultrathin platinum (2 nm) as a catalyst for direct growth (i.e., transfer-free) of graphene-like thin films (GLTFs) on a GaN/sapphire LED substrate. This method is more reproducible and convenient for industrial production, avoiding a series of problems associated with the transfer process. Through the measurement of electrical, optical, and thermal properties, we found that the addition of GLTFs improved the LED luminous current and reduced the turn-on voltage and luminous power consumption, and had obvious advantages in heat spreading, which has great prospects for improving the reliability, durability and service life of the device. This is one of the key aspects to achieving bright and durable LEDs
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