Transfer doping of epitaxial graphene on SiC(0001) using Cs

Abstract

Control of the charge carrier concentration is essential for applications of graphene. Here, we demonstrate the doping of epitaxial graphene on SiC(0001) via charge transfer from an adsorbed layer of Cs atoms with sub-monolayer coverage. The electronic structure of the graphene is analyzed using x-ray and angle-resolved photoelectron spectroscopy. In H-intercalated, quasi-freestanding monolayer graphene (QFMLG), the Dirac point can be tuned continuously from p-type to strong n-type doping. For strong n-type doping, analysis of the core level binding energies implies a deviation from a rigid band shift. This might be explained by an increased screening of the atomic core potential due to the higher number of charge carriers per C atom in the graphene layer. Furthermore, charge transfer into the SiC substrate leads to a change in band bending at the SiC/QFMLG interface, which saturates into a flat band scenario at higher Cs coverage. An analysis of the Fermi surfaces suggests an increasing electron-phonon-coupling in strongly doped QFMLG. In monolayer graphene (MLG), which is intrinsically n-type doped due to the presence of the buffer layer at the SiC interface, n-type doping can be enhanced by Cs evaporation in a similar fashion. In contrast to QFMLG, core level spectra and Dirac cone position in MLG apparently show a rigid band shift even for very high doping, emphasizing the importance of the substrate.