Transfer characteristics in a GaN MFSFET: comparison with a conventional GaN MOSFET

Abstract

Based on the Miller model, we develop an analytical model for the GaN-based metal–ferroelectric–semiconductor field-effect transistors (MFSFETs). In this article, we investigate the effects of ferroelectric film on the maximum drain current, transconductance and memory window of GaN MFSFET at the different hierarchical thickness values of 10, 30, 50, 100, 200 and 300 nm, as well as the polarisation influence. The results indicate that the thickness of ferroelectric film is one of the critical parameters, and certain trade-off should be made for various potential applications. Moreover, the advantages of GaN MFSFET are also investigated in detail, compared with the conventional GaN metal–oxide–semiconductor field-effect transistor under the conditions of similar design. Our results of simulation shows that GaN MFSFETs hold the numerous advantages in electrical characteristics, such as the maximal drain current reaching 69 mA, and the threshold voltage and the subthreshold slope as low as 1.5 V and 58 mV/decade, respectively. In general, these theoretical predictions not only indicate that GaN MFSFET devices have wide applicational perspectives, but also they provide some important references to the empirical research and the design of new electron devices in the future.