Abstract
In this paper we discuss the sources of the transconductance reduction of enhancement-mode pseudomorphic high electron mobility transistor (E-pHEMT) at a high gate bias and methods of improving the transconductance at a high gate bias. E-pHEMT usually suffers from severe transconductance reduction at a high gate bias. Our simulation showed that this reduction is mainly due to the low channel carrier density and high access resistance of the ungated region rather than the parasitic MESFET phenomenon. An epi structure that facilitates electron transfer through the barrier layer of the ungated region and self align gate (SAG) process lead to an improvement in transconductance linearity.
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