Abstract
Stress is distributed unequally along channels by both uniaxial and biaxial stressors. This study investigated channel-length-related performance enhancement by using contact etching stop layer (CESL) as the stressor. Devices with low tensile (L.T.) and high tensile (H.T.) stresses use CESLs with different thicknesses on nMOSFETs. Results indicate that transconductance enhances the shortest channel in H.T. devices compared with L.T. devices. The threshold voltage difference between L.T. and H.T. nMOSFETs verifies the high stress in H.T. nMOSFETs. However, this threshold voltage difference cannot verify the considerable decrease in the threshold voltage of the shortest channel of H.T. devices compared with L.T. devices.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
