Abstract
We present a study of the trade-off between the retention and variability of SrTiO3-based memristive devices. We identified the applied switching current and the device stoichiometry as main influence factors. We show that the SrO formation at the electrode interface, which has been revealed to improve the device retention significantly, is associated with an increased cycle-to-cycle and device-to-device variability. On the other hand, devices with homogeneous, Ti-terminated SrTiO3–Pt interfaces exhibit poor retention but the smallest variability. These results give valuable insights for the application of memristive SrTiO3 devices as non-volatile memory or in neural networks, where the control of variability is of key relevance.
Highlights
One of the major challenges in establishing memristive devices for non-volatile memory is their large cycle-to-cycle (C2C) and device-to-device (D2D) variability in both the high resistive state (HRS) and low resistive state (LRS)
We will present detailed studies of the D2D and C2C variability in SrTiO3 memristive devices in dependence of the processing and electroforming conditions. We achieve this by considering the influence of well-known main factors on the performance of SrTiO3 memristive devices, namely, the stoichiometry of the epitaxial SrTiO3 films,16,18,21 the deposition of additional SrO at the top electrode interface,18 and the current compliance applied during the forming step
The active layers of the memristive devices are 20 nm thick epitaxial SrTiO3 thin films deposited by pulsed laser deposition (PLD) on TiO2-terminated 0.5 wt. % Nb-doped SrTiO3 substrates, which simultaneously function as a conducting bottom electrode
Summary
One of the major challenges in establishing memristive devices for non-volatile memory is their large cycle-to-cycle (C2C) and device-to-device (D2D) variability in both the HRS and LRS. We achieve this by considering the influence of well-known main factors on the performance of SrTiO3 memristive devices, namely, the stoichiometry of the epitaxial SrTiO3 films,16,18,21 the deposition of additional SrO at the top electrode interface,18 and the current compliance applied during the forming step.10,15,19 The aforementioned influence factors result in two structural features, namely, SrO islands and Ruddlesden–Popper-type APBs. These features have been shown to significantly improve the device retention.18 we focus on SrO islands rather than a homogeneous oxygen diffusion barrier to investigate if they influence the variability as well.
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