Abstract
The requisites at the Large Hadron Collider (LHC) at CERN have driven silicon tracking detectors to the fringe of the modern technology. The next upgrade of the LHC to a 10 times increased luminosity of 7.5×1034cm−2s−1 will require semiconductor detectors with substantially improved radiation hardness. CERN-RD50 collaboration mandate is to provide detector technologies, which are able to operate in such an environment. Within this context, this paper describes the approaches and first results of a C++11 multi-threading software based on the Shockley–Ramo’s theorem to simulate non-irradiated and irradiated silicon micro-strips and pad detectors of complex geometries in order to understand signal formation and charge collection efficiencies of arbitrary charge distributions.
Highlights
The Large Hadron Collider (LHC) is the largest scientific apparatus ever built
Within the RD50 collaboration, one of the main strategies is material engineering which consists of defect and material characterization as well as computer simulations of defect formation and defect properties, indispensable tools to achieve a profound understanding of the radiation damage process [8]
They can be classified as Technology Computer-Aided Design (TCAD) programs that include the modeling of process steps based on defects and offer a solver for full diffusion and drift equations with additional physics models
Summary
The Large Hadron Collider (LHC) is the largest scientific apparatus ever built. It will remain the most powerful accelerator in the world for at least two decades, and its full exploitation is the highest priority in the European Strategy for Particle Physics [1]. In order to face the challenges of unprecedented pp luminosity for detectors, any increase of the radiation hardness and improvement in the understanding of the radiation damage mechanisms will be highly beneficial for the operation of silicon trackers and a possible replacement of pixel layers Following these motivations, the CERN-RD50 collaboration [5] (Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders) was initiated and approved in June 2002 by the CERN Research Board. Within the RD50 collaboration, one of the main strategies is material engineering which consists of defect and material characterization as well as computer simulations of defect formation and defect properties, indispensable tools to achieve a profound understanding of the radiation damage process [8] Along these lines a TRAnsient Current Simulator [9], known as TRACS, has been developed as an extensible tool for providing fast simulations of carrier dynamics inside a semiconductor detector that can have one or several readout electrodes.
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