Abstract
A 3D silicon sensor fabricated at Stanford with electrodes penetrating throughout the entire silicon wafer and with active edges was tested in a 1.4 T magnetic field with a 180 GeV/ c pion beam at the CERN SPS in May 2009. The device under test was bump-bonded to the ATLAS pixel FE-I3 readout electronics chip. Three readout electrodes were used to cover the 400 μ m long pixel side, this resulting in a p–n inter-electrode distance of ∼ 71 μ m . Its behavior was confronted with a planar sensor of the type presently installed in the ATLAS inner tracker. Time over threshold, charge sharing and tracking efficiency data were collected at zero and 15° angles with and without magnetic field. The latest is the angular configuration expected for the modules of the Insertable B-Layer (IBL) currently under study for the LHC phase 1 upgrade expected in 2014.
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