Track structure simulation of low energy electron damage to DNA using Geant4-DNA

Abstract

Due to the physical and chemical processes that are involved, interactions of ionizing radiations with cells lead to single- and double-strand breaks (SSB and DSB) and base damage to DNA cells. The damage may kill the cells or may be mis-repaired and lead to genetic diseases and cancers. Track structure Monte Carlo simulation of the DNA damage provides types of the damage and their frequencies. In the present work, to derive initial DNA damage, we used the Geant4-DNA code to simulate the physical, physico-chemical and chemical stages of interactions of incident beams of 100 eV–4.5 keV electrons. By considering the direct damage of electrons and also the indirect hydroxyl radical damage to the DNA, in a simulation, simple and complex damages to SSB and DSB were investigated. Moreover, the yield of damage and the probability of types of DNA damage were evaluated. The results of these calculations were compared with the existing experimental data and the other simulations. For electrons with energies lower than 500 eV, there were differences between our results and published data which are basically due to the existing differences in the physical (electron ionization, excitation cross sections) and chemical models of Geant4-DNA, the chemical processes considered in the simulations, DNA geometry, and the selected parameters for damage threshold as compared to the other codes. In the present work, the effect of the threshold energy of the strand breaks was also evaluated.