Abstract
In this paper, we present a comprehensive uncertainty budget for on-wafer S-parameter measurements of devices on a custom-built fused silica wafer, including instrumentation errors, connector repeatability, and calibration standard uncertainties. All major steps toward achieving traceability with the aid of a multiline thru-reflect-line calibration for the given measurement scenario are explained. For the first time, it is now possible to compare against each other the relative importance of different sources of uncertainty in on-wafer measurements. Results are shown for three typical devices with varying reflection and transmission characteristics.
Highlights
T RACEABILITY forms the basis for credible measurement results and their associated uncertainties
In coaxial and rectangular waveguide S-parameter measurements, traceability to dimensional measurements has been established for a number of years already, with challenges remaining at higher frequencies due to shrinking connector sizes
For on-wafer S-parameter measurements, a number of additional challenges need to be taken into consideration
Summary
T RACEABILITY forms the basis for credible measurement results and their associated uncertainties. In the European Project PlanarCal [1], a major effort is currently undertaken to characterize components and devices for eventual use in high-speed and microwave applications (e.g., wireless communications, automotive radar, and medical sensing) with known measurement uncertainties To this end, parasitic modes as well as effects occurring at higher frequencies such as radiation, dispersion, and surface roughness have been investigated together with the impact of the probe itself and its neighborhood. All the investigations confirmed that the measurement result depends on the environment as well as on the specific combination of substrate material, planar waveguide type, and probes For such fully specified combinations, and only when single-mode propagation is ensured, reliable uncertainties for on-wafer S-parameters can be stated. We describe the layout and technology used for the custom-built wafer, show simulation and modeling results, introduce the measurement setup used, describe the VNA measurement model and the characterization of the input quantities including AFM, and give an overview of typical results and uncertainty budgets achieved for devices with varying reflection and transmission characteristics
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