Abstract
Using the high brilliance femtosecond soft X-ray pulses from the Free-Electron LASer at Hamburg (FLASH) the X-ray induced transient optical reflectivity change of GaAs has been established as a versatile method for femtosecond X-ray/optical cross-correlation [1]. As the underlying physical mechanism is the X-ray induced dynamics within solids, we present in this work a feasibility study how transient grating methods could be used to study nanometer scale dynamics in materials, such as the radical diffusion parameters in photoresist materials for EUV lithography.
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