Abstract
Upconversion of subbandgap light of thin film single junction amorphous silicon solar cells may enhance their performance in the near infrared (NIR). In this paper we report on the application of the NIR–vis upconverter β-NaYF 4:Yb 3+(18%) Er 3+(2%) at the back of an amorphous silicon solar cell in combination with a white back reflector and its response to infrared irradiation. Current–voltage measurements and spectral response measurements were done on experimental solar cells. An enhancement of 10 μA/cm 2 was measured under illumination with a 980 nm diode laser (10 mW). A part of this was due to defect absorption in localized states of the amorphous silicon.
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