Towards Scalable Large-Area Pulsed Laser Deposition.

Zakhar Vakulov,Daniil Khakhulin,Roman Tominov,Viktor S Klimin,Vladimir A Smirnov,Oleg A Ageev,Evgeny Zamburg,Alexander Mikhaylichenko

doi:10.3390/ma14174854

Zakhar Vakulov, Daniil Khakhulin + Show 6 more

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https://doi.org/10.3390/ma14174854

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Abstract

One of the significant limitations of the pulsed laser deposition method in the mass-production-technologies of micro- and nanoelectronic and molecular device electronic fabrication is the issue of ensuring deposition of films with uniform thickness on substrates with large diameter (more than 100 mm) since the area of the laser spot (1–5 mm2) on the surface of the ablated target is incommensurably smaller than the substrate area. This paper reports the methodology that allows to calculate the distribution profile of the film thickness over the surface substrate with a large diameter, taking into account the construction and technological parameters of the pulsed laser deposition equipment. Experimental verification of the proposed methodology showed that the discrepancy with the experiment does not exceed 8%. The modeling of various technological parameters influence on the thickness uniformity has been carried out. Based on the modeling results, recommendations and parameters are proposed for manufacturing uniform thickness films. The results allow for increasing the film thickness uniformity with the thickness distribution < 5% accounts for ~ 31% of 300 mm diameter substrate.

Highlights

The pulsed laser deposition (PLD) method is widely used to form epitaxial and single-crystal complex oxides films with ferroelectric, ferromagnetic, dielectric, and superconducting properties [1,2,3,4,5]
In the PLD method, a laser beam is focused on a target placed in a vacuum chamber
The purpose of this work is to study the processes affecting film thickness uniformity deposited by the PLD method on substrates of large diameter (100 mm and more) and developing the methodology that allows calculating the film thickness distribution profile over the substrate surface, taking into account the design and technological parameters of PLD equipment

Summary

Introduction

The pulsed laser deposition (PLD) method is widely used to form epitaxial and single-crystal complex oxides films with ferroelectric, ferromagnetic, dielectric, and superconducting properties [1,2,3,4,5]. The advantages of this method include the possibility of maintaining the stoichiometric composition of the ablated material [6], good film adhesion [7], versatility in choosing the deposited material, as well as the possibility of forming film coatings on the surface of thermosensitive materials [8]. The study of the PLD process and the development of methods for solving issues limiting its implementation in mass production is highly urgent.

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