Abstract
Our previous modeling and simulation demonstrated that a considerable increase in Si single-crystal back surface field (BSF) solar cell performance is possible by modifications to give a so-called delta-BSF device. In our first measurements a widened absorption (up to λ≤3200 nm) and infrared photoconductivity (where the upper wavelength limit λ≤1900 nm was imposed by the emitting lamp) have been observed.
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