Abstract
In this paper we report initial results from structural and optical investigations on bilayers of InAs/GaAs quantum dots (QDs) grown by molecular beam epitaxy with different GaAs spacer layer thicknesses. We have used bright field imaging in transmission electron microscopy and high angle annular dark-field imaging in scanning transmission electron microscopy to study strain and compositional correlations in these QD structures. Our goal is to utilise valence electron energy-loss spectroscopy (VEELS) to probe the bandgap and optical properties of the quantum dots. We discuss the influence of Cerenkov losses on VEELS and approaches to mediating their effect on bandgap measurements.
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