Abstract
Despite significant technological advances in miniaturization and operational speed, modern electronic devices suffer from unescapably increasing rates of Joule heating and power consumption. Avoiding these limitations sparked the quest to identify alternative, charge-neutral information carriers. Thus, spin waves, the collective precessional motion of spins in permanent magnets, were proposed as a promising alternative system for encoding information. In order to surpass the speed, efficiency, functionality and integration density of current electronic devices, magnonic devices should be driven by electric-field induced methods. This review highlights recent progress in the development of electric-field-controlled magnonic devices, including present challenges, future perspectives and the scope for further improvement.
Highlights
Despite significant technological advances in miniaturization and operational speed, modern electronic devices suffer from unescapably increasing rates of Joule heating and power consumption
SWs can be used as an alternative to modern charge current-based complementary metal–oxide–semiconductor (CMOS) technology, which is suffering from increased rate of power consumption due to Joule heating
Apart from lower energy consumption, another advantage of SWs is that they can have wide variety of wavelengths ranging from few tens of micrometer down to few tens of nanometer with the corresponding frequency ranging from few Gigahertz to few Terahertz, which can be even controlled by tuning various internal and external parameters, such as saturation magnetization, various magnetic anisotropies, magnetostatic interactions, exchange interaction, magnetic field, and electric field[8,10,11]
Summary
A., Kanai, S., Yamanouchi, M., Ikeda, S., Matsukura, F., Ohno, H. When electric field is applied at FM/oxide interface, the number of electrons in OOP 3d-orbitals of Fe is changed with respect to IP orbitals as shown from first-principle calculations[33,38] (Fig. 2a). Some additional reports show that β depends upon the underlayer material[45,50], substrate[51], temperature[52], FM layer[44], and MgO overlayer thickness[53] This is worth to mention here that only first-order anisotropy varies with electric field, whereas second-order anisotropy remains unchanged[43,44] (Fig. 2c). The electric field applied at the FM/oxide interface changes the iPMA and modulates Gilbert damping parameter (Fig. 2d) as demonstrated by Okada et al.[44]. This is because iPMA and Gilbert damping, both, are originated from SOC. The possible reason behind this is the suppression of surface oxidization of FM
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