Abstract
We focus on the integration of composition tailored AlGaInAs quantum dots (QDs) in an AlGaAs p-i-n structure for solar cell applications. These QDs can absorb a wide range of the solar spectrum from the red visible to the near infrared spectral range. Different samples were grown and investigated in order to study the influence of doping, number of QD layers, QD arrangement and QD strain on the device performance. We anticipate that by suitable choice of QD composition, shape and barrier thickness electronic coupling between QD layers can be established to generate an intermediate band. Based on our result we propose a route towards intermediate band solar cells with these quaternary QDs.
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