Towards industrialisation of GaN‐on‐Si based high brightness blue LEDs

Abstract

AbstractThe manufacturability of blue LED structures grown on 6‐inch Si (111) substrates is reported. The totally epi‐structure thickness is only 3.75 μm, which allows faster epitaxy process throughput and lower manufacturing costs. Well controlled strain engineering leads to a room temperature wafer bow of 0 ± 5 μm and a highly uniform photoluminescence wavelength standard deviation of 1.1 nm. XRD FWHM (002) and (102) are 380 and 390 arcsec, respectively. For a blue 1×1 mm2 vertical thin film die with silicone dome lens, the optical light output power of 563 mW at an operating voltage of 3.05 V is achieved at 350 mA. Excellent leakage current (IR) yield is achieved with over 95% of dies exhibiting IR < 0.1 μA at ‐5 V. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)