Abstract
In this work, The MAPbI3(1−x)B3x thin films with different percentage (x% = 0, 0.1, 0.3, 0.5, 0.7, 0.9, 1) was successfully deposited on zinc oxide (ZnO) by spin coating technique. Herein we report the study of monovalent halide anion bromide (Br-) doped methylammonium lead iodine (MAPbI3). Br doping shown to be efficient to improve the optoelectronic properties and stability of MAPbI3(1−x)B3x/ZnO heterojunction. We investigate the effect of x% of bromine on the composition and morphology of films by X-ray diffraction (XRD), spectroscopy electron microscopy(SEM),Photoluminescence (PL) and UV–visible spectroscopy. The MAPbI3(1−x)B3x/ZnO films show that an adequate amount of x% Br leads to a homogeneous perovskite film with large grains, no pinholes with the band gap between 1.55 and 2.1 eV and the photoluminescent emission spectrum starts with the value 538 nm (MAPbBr3) up to780 nm (MAPbI3).
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