Abstract
The paper reports controlled deposition of optically transparent and electrically conductive ITO films prepared by a combination of rf (13.56MHz) and High Power Impulse Magnetron Sputtering (HiPIMS) systems without any post deposition thermal treatment/annealing. It is shown that (i) reactive admixture of N2 gas to the process and (ii) pressure in the deposition chamber enable to optimize optical properties of ITO films. Furthermore, the changes of electrical resistivity were observed, too. The variation of these ITO properties is attributed to change of crystalline structure measured by XRD methods.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
