Abstract
AbstractDeveloping new materials for the fabrication of resistive random‐access memory is of great significance in this period of big data. Herein, we present a novel design strategy of embedding donor (D) and acceptor (A) fragments into imine‐linked frameworks to construct resistive switching covalent organic frameworks (COFs) for high‐performance memristors. Two D‐A‐type two‐dimensional COFs, COF‐BT‐TT and COF‐TT‐TVT, were designed and synthesized using a conventional solvothermal approach, and high‐quality thin films of these materials deposited on ITO substrate exhibited great potential as an active layer for memristors. Rewritable memristors based on 100 nm thick COF‐TT‐BT and COF‐TT‐TVT films showed a high ON/OFF current ratio (ca. 105 and 104) and low driving voltage (1.30 and 1.60 V). The cycle period and retention time for COF‐TT‐BT‐based rewritable devices were as high as 319 cycles and 3.3×104 s at a constant voltage of 0.1 V (160 cycles and 1.2×104 s for the COF‐TT‐TVT memristor).
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