Abstract

In this article we review the concept of electron-beam-addressed high density phase-change nanoparticle memory, where information is written in the phase state of gallium nanoparticles by electron beam excitation, and read-out via measurements of cathodoluminescent emission. The high spatial resolution provided by a focused electron beam, far below the optical diffraction limit, offers the possibility of addressing individual nanoparticles within a close-packed array, thereby enabling a new conceptual basis for high density phase-change memory.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call