Abstract
Abstract Although organometal halide perovskites are emerging as emitters with extremely high color purity and low cost, device performances are significantly restricted by poor morphology of the perovskite layer. In this work, a multi-step spin-coating method is used to prepare CH3NH3PbBr3 perovskite layer, which a dense and uniform perovskite film with small grain sizes and a ∼100% coverage. Moreover, the component of the hole injection layer poly(3,4-ethylenedioxythio- phene):poly(4-styrenesulphonate) (PEDOT:PSS) adjusted with PSS is applied to reduce the injection barrier between PEDOT:PSS and perovskite layer. With above-mentioned approaches, efficient perovskite light-emitting diodes with maximum luminance and current efficiency of 9900 cd m−2 and 2.6 cd A−1 are eventually acquired.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
