Abstract
The regularities of ion synthesis of dislocation-related luminescence centers in silicon have been investigated. By varying the conditions of additional irradiation with boron ions, as well as the conditions of subsequent annealing, we obtain an increase in the luminescence intensity, as well as a shift of maximum of the temperature dependence towards higher temperatures. It was found for the first time that, for the highest used dose of boron ions (3·1017 cm-2) and additional heat treatment at 830 °C, it is possible to get the measurable luminescence at room temperature.
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