Abstract
AbstractHybrid perovskite photovoltaic devices heavily rely on the use of organic (rather than inorganic) charge‐transport layers on top of a perovskite absorber layer because of difficulties in depositing inorganic materials on top of these fragile absorber layers. However, in comparison to the unstable and expensive organic transport materials, inorganic charge‐transport layers provide improved charge transport and stability to the device architecture. Here, we report photovoltaic devices using all‐inorganic transport layers in a planar p‐i‐n junction device configuration using formamidinium lead tribromide (FAPbBr3) as an absorber. Efficient planar devices are obtained through atomic layer deposition of nickel oxide and sputtered zinc oxide as hole‐ and electron‐transport materials, respectively. Using only inorganic charge‐transport layers resulted in planar FAPbBr3 devices with a power conversion efficiency of 6.75 % at an open‐circuit voltage of 1.23 V. The transition of planar FAPbBr3 devices making from all‐organic towards all–inorganic charge‐transport layers is studied in detail.
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