Abstract
A thermally evaporated molybdenum oxide (MoO3) film was used as a window layer of a hydrogenated amorphous silicon (a-Si:H) solar cell instead of the conventional p-type hydrogenated amorphous silicon carbide (p-a-SiC:H) film. The short circuit current density (JSC) and fill factor were increased due to the wide optical band gap and high conductivity of the MoO3 film. As a result, the conversion efficiency of the fabricated MoO3 solar cell was increased to 6.21% compared to the typical a-Si:H solar cell (5.97%).
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