Abstract
We investigate native nitrogen vacancy (NV) and silicon vacancy (SiV) color centers in a commercially available, heteroepitaxial, wafer-sized, mm thick, single-crystal diamond. We observe single, native NV centers with a density of roughly 1 NV per μm3 and moderate coherence time (T2 = 5 μs) embedded in an ensemble of SiV centers. Using low temperature luminescence of SiV centers as a probe, we prove the high crystalline quality of the diamond especially close to the growth surface, consistent with a reduced dislocation density. Using ion implantation and plasma etching, we verify the possibility to fabricate nanostructures with shallow color centers rendering our material promising for fabrication of nanoscale sensing devices. As this diamond is available in wafer-sizes up to 100 mm, it offers the opportunity to up-scale diamond-based device fabrication.
Highlights
We apply reactive ion etching to the material to illustrate routes toward up-scaling of diamond-related nanofabrication
We demonstrate coherent manipulation of single native nitrogen vacancy (NV) center spins in the single-crystal diamonds (SCDs), while we use low-temperature spectroscopy of silicon vacancy (SiV) center PL as a probe to prove the high crystalline quality of the material
During heteroepitaxial growth of thick SCD, the dislocation density decreases proportional to the inverse of the SCD layer thickness indicating high crystalline quality for this material at the growth surface
Summary
We apply reactive ion etching to the material to illustrate routes toward up-scaling of diamond-related nanofabrication. We demonstrate coherent manipulation of single native NV center spins in the SCD, while we use low-temperature spectroscopy of SiV center PL as a probe to prove the high crystalline quality of the material.
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