Abstract
The paper summarizes the evolution of the Backside-Illuminated Multi-Collection-Gate (BSI MCG) image sensors from the proposed fundamental structure to the development of a practical ultimate-high-speed silicon image sensor. A test chip of the BSI MCG image sensor achieves the temporal resolution of 10 ns. The authors have derived the expression of the temporal resolution limit of photoelectron conversion layers. For silicon image sensors, the limit is 11.1 ps. By considering the theoretical derivation, a high-speed image sensor designed can achieve the frame rate close to the theoretical limit. However, some of the conditions conflict with performance indices other than the frame rate, such as sensitivity and crosstalk. After adjusting these trade-offs, a simple pixel model of the image sensor is designed and evaluated by simulations. The results reveal that the sensor can achieve a temporal resolution of 50 ps with the existing technology.
Highlights
The fundamental performance of image sensors is represented by the intensity resolution, the spatial resolution and the temporal resolution, and their dynamic ranges
The results revealed that the sensor could achieve a temporal resolution of 50 ps with the existing technology
Each row shows a sequence of five consecutive images; one laser diode (LD) image appears in each
Summary
The fundamental performance of image sensors is represented by the intensity resolution (sensitivity), the spatial resolution and the temporal resolution, and their dynamic ranges. The resolution limits are governed by noise. The lower limit of the sensitivity is the noise level on the signal intensity. The temporal and the spatial resolutions are limited by temporal and spatial mixing of signals. The infinitesimal resolution cannot be achieved even without noise. To enhance the temporal resolution For formulation.
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