Toward the Development of an InSb-Based Neutron-Resistant Hall Sensor

Abstract

We describe a study concerning two irradiation series of InSb thin films in the form of Hall structures, using the natural neutron spectrum of a thermal-type fission reactor. We used mono- and polycrystalline InSb thin films with various levels of donor doping. The range of electron concentration values of the samples (from $10^{{16}}$ to $10^{{18}}$ cm $^{{-3}}$ ) allowed us to study the impact of predominant thermal neutrons on various InSb structures. Preirradiation long-term annealing of the samples at high temperatures ensured the thermal stabilization of the electrical parameters and made it possible to assess only defects introduced by neutrons in postirradiation heat treatments, without the influence of postevaporation defects. Neutron fluences of $8.7\times 10^{ {17}}$ cm $^{ {-2}}$ and $1.2\times 10^{ {18}}$ cm $^{ {-2}}$ were applied sequentially, and the total fluence was above $2\times 10^{ {18}}$ cm $^{ {-2}}$ . Annealing at high temperatures was performed after each irradiation process to estimate the quantity of donors created and to remove defects arising in the InSb structure. The results demonstrate the possibility of application of the InSb thin film in neutron-resistant Hall sensor (NRHS) for modern technological settings: fusion and fission reactors, particle accelerators, cosmic, and other scientific research.