Toward Precise n-Type Doping Control in MOVPE-Grown β-Ga2O3 Thin Films by Deep-Learning Approach

Ta-Shun Chou,Wolfram Miller,Saud Bin Anooz,Martin Albrecht,Jana Rehm,Natasha Dropka,Thi Thuy Vi Tran,Palvan Seyidov,Klaus Irmscher,Andreas Popp,Raimund Grüneberg

doi:10.3390/cryst12010008

Ta-Shun Chou, Wolfram Miller + Show 9 more

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https://doi.org/10.3390/cryst12010008

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Journal: Crystals	Publication Date: Dec 21, 2021
Citations: 7	License type: CC BY 4.0

Affiliation: Leibniz Institute for Crystal Growth

Abstract

In this work, we train a hybrid deep-learning model (fDNN, Forest Deep Neural Network) to predict the doping level measured from the Hall Effect measurement at room temperature and to investigate the doping behavior of Si dopant in both (100) and (010) β-Ga2O3 thin film grown by the metalorganic vapor phase epitaxy (MOVPE). The model reveals that a hidden parameter, the Si supplied per nm (mol/nm), has a dominant influence on the doping process compared with other process parameters. An empirical relation is concluded from this model to estimate the doping level of the grown film with the Si supplied per nm (mol/nm) as the primary variable for both (100) and (010) β-Ga2O3 thin film. The outcome of the work indicates the similarity between the doping behavior of (100) and (010) β-Ga2O3 thin film via MOVPE and the generality of the results to different deposition systems.

Highlights

Β-Ga2O3 has attracted significant attention in academia and industry as one of the potential candidates for power-electronics application due to its wide bandgap of 4.9 eV and a high theoretical breakdown voltage of up to 8 MV/cm2 [1]
In this work, we train a hybrid deep-learning model to predict the doping level measured from the Hall Effect measurement at room temperature and to investigate the doping behavior of Si dopant in both (100) and (010) β-Ga2O3 thin film grown by the metalorganic vapor phase epitaxy (MOVPE)
An empirical relation is concluded from this model to estimate the doping level of the grown film with the Si supplied per nm as the primary variable for both (100) and (010) β-Ga2O3 thin film

Summary

Introduction

Β-Ga2O3 has attracted significant attention in academia and industry as one of the potential candidates for power-electronics application due to its wide bandgap of 4.9 eV and a high theoretical breakdown voltage of up to 8 MV/cm2 [1]. A critical advantage of β-Ga2O3 is the availability of large, high-quality native substrates grown from the melt using various techniques, such as the Czochralski method [2,3], the floatingzone techniques [4,5], edge-defined film-fed growth (EFG) [6], and the vertical Bridgman method [7], which allows for the economically practical manufacturing of β-Ga2O3 when compared to other wide-bandgap semiconductors Due to these properties, β-Ga2O3 is considered a potential alternative to GaN and SiC for future power electronics [8]. Due to a wide doping range (1 × 1017 to 8 × 1019 cm−3) and low “memory effect” in the reactor chamber [12], has attracted great interest for the doping of β-Ga2O3 thin film grown by MOVPE

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Results

Conclusion